the mark shows major revised points. the revised points can be easily searched by copying an "" in the pdf file and specifying it in the "find what:" field. caution : observe precautions when handling because these devices are sensitive to electrostatic discharge npn silicon rf transistor ne66219 / 2sc5606 npn sil icon rf transistor for low noise high - gain amplification 3 - pin ultra super minimold (19, 1608 pkg) document no. pu10 781 ej0 1 v0ds (1st edition) (previous no. p14658ej3v0ds00) date published august 20 09 ns features ? suitable for high - frequency oscillation ? f t = 25 ghz technology adopted ? 3 - pin ultra super minimold (19, 1608 pkg) package ordering information part number order number package quantity supplying form NEC66219 2sc5606 ne66219 - a 2sc5606 - a 3 - pin ultra super minimold (19, 1608 pkg ) (pb - f ree) 50 pcs (non reel) ? 8 mm wide embossed taping ne66219 - t1 2sc5606 - t1 ne66219 - t1 - a 2sc5606 - t1 - a 3 kpcs/reel ? pin 3 (collector) face the perforation side of the tape remark to order evaluation samples, please con tact your nearby sales office. the u nit sample quantity is 50 pcs. absolute maximum ratings (t a = +25 ? parameter symbol ratings unit collector to base voltage v cbo 15 v collector to emitter voltage v ceo 3.3 v emitter to base voltage v eb o 1.5 v collector current i c 35 ma total power dissipation p tot note 115 mw junction temperature t j 150 ? c storage temperature t stg ? 65 to +150 ? c note mounted on 1.08 cm 2 ? 1.0 mm (t) glass epoxy substrate < r >
data sheet pu10781ej01v0ds 2 ne66219 / 2sc5606 electrical characteristics (t a = +25 ? parameter symbol test conditions min. typ. max. unit dc characteristics collector cut - off current i cbo v cb = 5 v, i e = 0 ma C C 200 na emitter cut - off current i eb o v eb = 1 v, i c = 0 ma C C 200 na dc current gain h fe note 1 v ce = 2 v, i c = 5 ma 60 80 100 C rf characteristics gain bandwidth product f t v c e = 2 v, i c = 20 m a, f = 2 ghz C 21 C ghz insertion power gain ? s 21e ? 2 v c e = 2 v, i c = 20 m a, f = 2 ghz 10 12.5 C db noise figure nf v c e = 2 v, i c = 5 m a, f = 2 ghz, z s = z opt C 1.2 1.5 d b reverse transfer capacitance c re note 2 v c b = 2 v , i e = 0 ma, f = 1 mhz C 0.21 0.3 pf maximum available power gain mag note 3 v c e = 2 v, i c = 20 m a, f = 2 ghz C 14 C db maximum stable power gain msg note 4 v c e = 2 v, i c = 20 m a, f = 2 ghz C 15 C db n otes 1. pulse measurement: pw ? 350 ? s, duty cycle ? 2% 2. collector to base capacitance when the emitter grounded 3. mag = 4. msg = h fe classification rank fb /yfb marking ua h fe 60 to 100 ( k C ? 2 C 21 s 12 s 21 s 12 < r >
data sheet pu10781ej01v0ds 3 ne66219 / 2sc5606 typical characteristics (unless otherwise specified , t a = +25 ? remark the graphs indicate nominal characteristics. < r >
data sheet pu10781ej01v0ds 4 ne66219 / 2sc5606 remark the graphs indicate nominal characteristics.
data sheet pu10781ej01v0ds 5 ne66219 / 2sc5606 remark the graph indicate s nominal characteristics. s - parameters < r >
data sheet pu10781ej01v0ds 6 ne66219 / 2sc5606 package dimensions 3 - pin ultra super minimold (19, 1608 pkg) (unit: mm)
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